Bandgap engineering of GaN nanowires

Journal Article · Sun May 15 04:00:00 EDT 2016 · AIP Advances

DOI:https://doi.org/10.1063/1.4951678· OSTI ID:22611699

Ming, Bang-Ming; Yan, Hui ^[1]; Wang, Ru-Zhi ^[1]; Yam, Chi-Yung ^[2]; Xu, Li-Chun ^[3]; Lau, Woon-Ming ^[2]

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1. College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124 (China)
2. Beijing Computational Science Research Center, Beijing, 100094 (China)
3. College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024 (China)

Bandgap engineering has been a powerful technique for manipulating the electronic and optical properties of semiconductors. In this work, a systematic investigation of the electronic properties of [0001] GaN nanowires was carried out using the density functional based tight-binding method (DFTB). We studied the effects of geometric structure and uniaxial strain on the electronic properties of GaN nanowires with diameters ranging from 0.8 to 10 nm. Our results show that the band gap of GaN nanowires depends linearly on both the surface to volume ratio (S/V) and tensile strain. The band gap of GaN nanowires increases linearly with S/V, while it decreases linearly with increasing tensile strain. These linear relationships provide an effect way in designing GaN nanowires for their applications in novel nano-devices.

• OSTI ID: 22611699
• Journal Information: AIP Advances, Journal Name: AIP Advances Journal Issue: 5 Vol. 6; ISSN AAIDBI; ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
AUGMENTATION
DENSITY
DENSITY FUNCTIONAL METHOD
EQUIPMENT
GALLIUM NITRIDES
NANOWIRES
OPTICAL PROPERTIES
SEMICONDUCTOR MATERIALS
STRAINS
SURFACES