Enhancing the performance of blue GaN-based light emitting diodes with carrier concentration adjusting layer
- R&D Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083,P. R. China (China)
In this work, a novel carrier concentration adjusting insertion layer for InGaN/GaN multiple quantum wells light-emitting diodes was proposed to mitigate the efficiency droop and improve optical output properties at high current density. The band diagrams and carrier distributions were investigated numerically and experimentally. The results indicate that due to the newly formed electron barrier and the adjusted built-in field near the active region, the hole injection has been improved and a better radiative recombination can be achieved. Compared to the conventional LED, the light output power of our new structure with the carrier concentration adjusting layers is enhanced by 127% at 350 mA , while the efficiency only droops to be 88.2% of its peak efficiency.
- OSTI ID:
- 22611631
- Journal Information:
- AIP Advances, Journal Name: AIP Advances Journal Issue: 3 Vol. 6; ISSN AAIDBI; ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIERS
COMPARATIVE EVALUATIONS
CONCENTRATION RATIO
CURRENT DENSITY
DIFFUSION BARRIERS
DISTRIBUTION
EFFICIENCY
ELECTRONIC STRUCTURE
GALLIUM NITRIDES
INDIUM COMPOUNDS
INJECTION
LAYERS
LIGHT EMITTING DIODES
QUANTUM WELLS
RECOMBINATION
VISIBLE RADIATION