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Using quantum dot photoluminescence for load detection

Journal Article · · AIP Advances
DOI:https://doi.org/10.1063/1.4961145· OSTI ID:22611409
 [1];  [2]; ; ;  [1]
  1. Technische Universität Chemnitz, Reichenhainer Straße, 09126 Chemnitz (Germany)
  2. Fraunhofer Institute for Electronic Nano Systems, Technologie-Campus 3, 09126 Chemnitz (Germany)
We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL) of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N′,N′-Tetrakis(3-methylphenyl)-3,3′-dimethylbenzidine (HMTPD) and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.
OSTI ID:
22611409
Journal Information:
AIP Advances, Journal Name: AIP Advances Journal Issue: 8 Vol. 6; ISSN AAIDBI; ISSN 2158-3226
Country of Publication:
United States
Language:
English