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Growth and photoluminescence study of ZnSe quantum dots

Journal Article · · Journal of Electronic Materials

The authors report detailed photoluminescence (PL) studies of ZnSe quantum dots grown by controlling the flow duration of the precursors in a metal-organic chemical vapor deposition system. The growth time of the quantum dots determines the amount of blue shift observed in the PL measurements. Blue shift as large as 320 meV was observed, and the emission was found to persist up to room temperature. It is found that changing the flow rate and the total number of quantum dot layers also affect the peak PL energy. The temperature dependence of the peak PL energy follows the Varshni relation. From analyzing the temperature-dependent integrated intensity of the photoluminescence spectra, it is found that the activation energy for the quenching of photoluminescence increases with decreasing quantum dot size, and is identified as the binding energy of the exciton in ZnSe quantum dot.

Research Organization:
National Taiwan Univ., Taipei (TW)
OSTI ID:
20015397
Journal Information:
Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 1 Vol. 29; ISSN JECMA5; ISSN 0361-5235
Country of Publication:
United States
Language:
English

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