Modeling of external electric field effect on the carbon and silicon carbide nanotubes
- Saint Petersburg State University, 7/9 Universitetskaya nab., St. Petersburg, 199034 (Russian Federation)
- Saint Petersburg Electrotechnical University “LETI”, 5 Prof. Popova, St. Petersburg, 197376 (Russian Federation)
Studying emission characteristics of nanotubes is extremely important for development of electronics. Compared to other electron sources nanotube-based field emitters allow obtaining significant emission currents at relatively low values of the applied field. It is possible due to their unique structure. This article is devoted to theoretical investigation how external electric field effects several samples of open single-wall nanotubes from carbon and silicon carbide. Total energies, dipole moments and band gaps for five types of nanotubes were calculated from the first principles. The numerical experiment results indicate the adequacy of modeling. It was concluded that considered configurations of achiral carbon nanotubes should be semiconductors.
- OSTI ID:
- 22609131
- Journal Information:
- AIP Conference Proceedings, Vol. 1748, Issue 1; Conference: STRANN 2016: 5. international conference on state-of-the-art trends of scientific research of artificial and natural nanoobjects, St. Petersburg (Russian Federation), 26-29 Apr 2016; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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