Tuning the band structures of single walled silicon carbide nanotubes with uniaxial strain: a first principles study

Journal Article · Fri May 09 00:00:00 EDT 2008 · Applied Physics Letters, 92(18):183116

DOI:https://doi.org/10.1063/1.2924307· OSTI ID:937382

Wang, Zhiguo; Zu, Xiaotao T; Xiao, H Y; Gao, Fei; Weber, William J

Electronic band structures of single-walled silicon carbide nanotubes are studied under uniaxial strain using first principles calculations. The band structure can be tuned by mechanical strain in a wide energy range. The band gap decreases with uniaxial tensile strain, but initially increases with uniaxial compressive strain and then decreases with further increases in compressive strain. These results may provide a way to tune the electronic structures of silicon carbide nanotubes, which may have promising applications in building nanodevices.

• Research Organization: Pacific Northwest National Laboratory (PNNL), Richland, WA (US)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 937382
• Report Number(s): PNNL-SA-60194; KC0201020
• Journal Information: Applied Physics Letters, 92(18):183116, Journal Name: Applied Physics Letters, 92(18):183116 Journal Issue: 18 Vol. 92; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
Band structure
COMPRESSION
ELECTRONIC STRUCTURE
ENERGY GAP
MECHANICAL TESTS
NANOTUBES
Nanotubes
SILICON CARBIDES
STRAINS
Silicon carbide
Strain