Effect of Zr{sup 4+} substitution on ferroelectric and dielectric properties of BaTiO{sub 3} ceramics
A lead-free system, BaTi{sub (1−x)}Zr{sub x}O{sub 3}, with x varying from 0.00 to 0.15 (in steps of 0.05), were prepared by solid state reaction method. X-ray diffraction study confirms the perovskite-type tetragonal structure with, a = 4.003 Å and c = 3.998 Å for pure BaTiO{sub 3} and a = 4.027 Å and c = 4.023 Å for pure BaTi{sub 0.85}Zr{sub 0.15}O{sub 3}. Microstructure changes, with Zr{sup 4+} in BaTi{sub (1−x)}Zr{sub x}O{sub 3}, are studied using scanning electron microscopy (SEM). Dielectric constant measurements show the maximum dielectric constant value (~ 9445) for a composition, BaTi{sub 0.85}Zr{sub 0.15}O{sub 3}. P-E loop measurements support ferroelectric nature for all the samples and maximum polarization value (~10.55 µC/cm{sup 2}) with squareness ratio ~0.6, at electric field 7.11 kV/cm, is obtained for BaTi{sub 0.85}Zr{sub 0.15}O{sub 3} composition. All the measured properties suggest that the BaTi{sub 0.85}Zr{sub 0.15}O{sub 3} may be suitable for memory device applications.
- OSTI ID:
- 22608917
- Journal Information:
- AIP Conference Proceedings, Vol. 1731, Issue 1; Conference: DAE solid state physics symposium 2015, Uttar Pradesh (India), 21-25 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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