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Title: Effect of different sulphur precursors on morphology and band-gap on the formation of Cu{sub 2}ZnSnS{sub 4} (CZTS) particles with microwave irradiation

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4948221· OSTI ID:22608912
;  [1]
  1. Department of Energy Sciences and Engineering, Indian Institute of Technology Bombay (India)

Cu{sub 2}ZnSnS{sub 4} (CZTS) is a promising semiconductor material for ecological cost effective thin film Photovoltaic (PV) devices. As it contains earth abundant and non-toxic elements, it has the advantages over commercially available CIGS and CdTe thin film PV devices. In the present work, the pure phase Cu{sub 2}ZnSnS{sub 4} particles were successfully synthesised with microwave irradiation. The morphology and phase study was carried out for the samples prepared with two different sulphur precursors viz. thiourea and thioacetamide (TAA). CZTS particles with thiourea as sulphur precursor are more crystalline than CZTS particles with TAA. The band gap of 1.654 eV and 1.713 eV were calculated for the samples prepared with thiourea and TAA respectively.

OSTI ID:
22608912
Journal Information:
AIP Conference Proceedings, Vol. 1731, Issue 1; Conference: DAE solid state physics symposium 2015, Uttar Pradesh (India), 21-25 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English