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Title: Topological insulator behavior of WS{sub 2} monolayer with square-octagon ring structure

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4948215· OSTI ID:22608907
 [1];  [2];  [3];  [4]
  1. Centre for Physical Sciences, School of Basic and Applied Sciences, Central University of Punjab, Bathinda, India 151001 (India)
  2. Department of Physics, Michigan Technological University Houghton, MI (United States)
  3. Department of Physics, Himachal Pradesh University Shimla, India, 171005 (India)
  4. Department of Physics, Panjab University Chandigarh, India 160014 (India)

We report electronic behavior of an allotrope of monolayer WS{sub 2} with a square octagon ring structure, refereed to as (so-WS{sub 2}) within state-of-the-art density functional theory (DFT) calculations. The WS{sub 2} monolayer shows semi-metallic characteristics with Dirac-cone like features around Γ. Unlike p-orbital’s Dirac-cone in graphene, the Dirac-cone in the so-WS{sub 2} monolayer originates from the d-electrons of the W atom in the lattice. Most interestingly, the spin-orbit interaction associated with d-electrons induce a finite band-gap that results into the metal-semiconductor transition and topological insulator-like behavior in the so-WS{sub 2} monolayer. These characteristics suggest the so-WS{sub 2} monolayer to be a promising candidate for the next-generation electronic and spintronics devices.

OSTI ID:
22608907
Journal Information:
AIP Conference Proceedings, Vol. 1731, Issue 1; Conference: DAE solid state physics symposium 2015, Uttar Pradesh (India), 21-25 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English