Highly reliable spin-coated titanium dioxide dielectric

Journal Article · Mon May 23 00:00:00 EDT 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4947895· OSTI ID:22608671

Mondal, Sandip; Kumar, Arvind; Venkataraman, V. ^[1]

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1. Department of Physics, Indian Institute of Science, Bangalore-560012 (India)

Dielectric degradation as low as 0.3 % has been observed for a highly reliable Titanium dioxide (TiO{sub 2}) film after constant voltage stressing (CVS) with – 4 V for 10{sup 5} second at room temperature (300 K). The film was fabricated by sol –gel spin – coating method on a lightly doped p-Si (~10{sup 15} cm{sup −3}) substrate. The equivalent oxide thickness (EOT) is 7 nm with a dielectric constant 33 (at 1 MHz). Metal – Oxide – Semiconductor (MOS) capacitors have been fabricated with an optimum annealing temperature of 800°C for one hour in a preheated furnace. The dielectric degradation is annealing temperature dependent. A degradation of 1.4 %, 1.2 % and 1.1 % has been observed for 400°C, 600°C and 1000°C temperature annealed MOS respectively. The dielectric degradation increases below or above the optimum temperature of annealing.

• OSTI ID: 22608671
• Journal Information: AIP Conference Proceedings, Vol. 1731, Issue 1; Conference: DAE solid state physics symposium 2015, Uttar Pradesh (India), 21-25 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CAPACITORS
DIELECTRIC MATERIALS
DOPED MATERIALS
FILMS
PERMITTIVITY
SEMICONDUCTOR MATERIALS
SILICON OXIDES
SOL-GEL PROCESS
SPIN
SPIN-ON COATING
STRESSES
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
THICKNESS
TITANIUM
TITANIUM OXIDES
VISIBLE RADIATION