Heterojunction between the delafossite TCO n-copper indium oxide and p-Si for solar cell applications

Journal Article · Mon May 23 00:00:00 EDT 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4947884· OSTI ID:22608663

Keerthi, K.; Nair, B. G.; Masuzawa, T.; Saito, I.; Okano, K. ^[1]; Johns, N. ^[2]

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1. Department Of Material Science, International Christian University (Japan)
2. Indian Institute of Technology, Bombay (India)

Junction formation of n-copper indium oxide (CIO) (extrinsically undoped) with p-Si leading to conversion of photons in the UV-Vis range is being reported for the first time. I-V and temporal photoconductivity data confirm positively the carrier generation in CIO under irradiation while optical absorbance data furnish its band gap to be ~ 3.1 eV. Ultraviolet photoelectron spectroscopy is used to study the electronic band structure of CIO on Si and to construct a schematic diagram of the hetero-junction to explain the observed photovoltaic phenomena.

• OSTI ID: 22608663
• Journal Information: AIP Conference Proceedings, Vol. 1731, Issue 1; Conference: DAE solid state physics symposium 2015, Uttar Pradesh (India), 21-25 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIERS
CONNECTORS
COPPER
COPPER COMPOUNDS
ELECTRIC CONTACTS
ELECTRONIC STRUCTURE
ENERGY GAP
HETEROJUNCTIONS
INDIUM OXIDES
IRRADIATION
PHOTOCONDUCTIVITY
PHOTOELECTRON SPECTROSCOPY
PHOTOVOLTAIC EFFECT
P-N JUNCTIONS
SILICON
SOLAR CELLS
ULTRAVIOLET RADIATION