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Title: CuS p-type thin film characterization deposited on Ti, ITO and glass substrates using spray pyrolysis deposition (SPD) for light emitting diode (LED) application

Abstract

The copper sulphide (CuS) thin films were grown with good adhesion by spray pyrolysis deposition (SPD) on Ti, ITO and glass substrates at 200 °C. The distance between nozzle and substrate is 30 cm. The composition was prepared by mixing copper chloride CuCl{sub 2}.2H{sub 2}O as a source of Cu{sup 2+} and sodium thiosulfate Na{sub 2}S{sub 2}O{sub 3}.5H{sub 2}O as a source of and S{sup 2−}. Two concentrations (0.2 and 0.4 M) were used for each CuCl{sub 2} and Na{sub 2}S{sub 2}O{sub 3} to be prepared and then sprayed (20 ml). The process was started by spraying the solution for 3 seconds and after 10 seconds the cycle was repeated until the solution was sprayed completely on the hot substrates. The structural characteristics were studied using X-ray diffraction; they showed covellite CuS hexagonal crystal structure for 0.2 M concentration, and covellite CuS hexagonal crystal structure with two small peaks of chalcocite Cu{sub 2}S hexagonal crystal structure for 0.4 M concentration. Also the surface and electrical characteristics were investigated using Field Emission Scanning Electron Microscopy (FESEM) and current source device, respectively. The surface study for the CuS thin films showed nanorods to be established for 0.2 M concentration and mix ofmore » nanorods and nanoplates for 0.4 M concentration. The electrical study showed ohmic behavior and low resistivity for these films. Hall Effect was measured for these thin films, it showed that all samples of CuS are p- type thin films and ensured that the resistivity for thin films of 0.2 M concentration was lower than that of 0.4 M concentration; and for the two concentrations CuS thin film deposited on ITO had the lowest resistivity. This leads to the result that the conductivity was high for CuS thin film deposited on ITO substrate, and the conductivity of the three thin films of 0.2 M concentration was higher than that of 0.4 M concentration.« less

Authors:
 [1];  [2]; ; ;  [1];  [1];  [2];  [1];  [2]
  1. Institue of Nano-Optoelectronics Research and Technology (INOR), School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia)
  2. (Iraq)
Publication Date:
OSTI Identifier:
22608586
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1733; Journal Issue: 1; Conference: IC-NET 2015: International conference on nano-electronic technology devices and materials 2015, Selangor (Malaysia), 27 Feb - 2 Mar 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ADHESION; CONCENTRATION RATIO; COPPER; COPPER CHLORIDES; COPPER IONS; COPPER SULFIDES; CRYSTAL STRUCTURE; CRYSTALS; FIELD EMISSION; GLASS; HALL EFFECT; LIGHT EMITTING DIODES; NANOSTRUCTURES; SCANNING ELECTRON MICROSCOPY; SODIUM SULFIDES; SUBSTRATES; SURFACES; THIN FILMS; X-RAY DIFFRACTION

Citation Formats

Sabah, Fayroz A., E-mail: fayroz-arif@yahoo.com, Department of Electrical Engineering, College of Engineering, Al-Mustansiriya University, Baghdad, Ahmed, Naser M., E-mail: naser@usm.my, Hassan, Z., E-mail: zai@usm.my, Azzez, Shrook A., Rasheed, Hiba S., E-mail: hibasaad1980@yahoo.com, Department of Physics, College of Education, Al-Mustansiriya University, Baghdad, Al-Hazim, Nabeel Z., E-mail: nabeelnano333@gmail.com, and Ministry of Education, the General Directorate for Educational Anbar. CuS p-type thin film characterization deposited on Ti, ITO and glass substrates using spray pyrolysis deposition (SPD) for light emitting diode (LED) application. United States: N. p., 2016. Web. doi:10.1063/1.4948839.
Sabah, Fayroz A., E-mail: fayroz-arif@yahoo.com, Department of Electrical Engineering, College of Engineering, Al-Mustansiriya University, Baghdad, Ahmed, Naser M., E-mail: naser@usm.my, Hassan, Z., E-mail: zai@usm.my, Azzez, Shrook A., Rasheed, Hiba S., E-mail: hibasaad1980@yahoo.com, Department of Physics, College of Education, Al-Mustansiriya University, Baghdad, Al-Hazim, Nabeel Z., E-mail: nabeelnano333@gmail.com, & Ministry of Education, the General Directorate for Educational Anbar. CuS p-type thin film characterization deposited on Ti, ITO and glass substrates using spray pyrolysis deposition (SPD) for light emitting diode (LED) application. United States. doi:10.1063/1.4948839.
Sabah, Fayroz A., E-mail: fayroz-arif@yahoo.com, Department of Electrical Engineering, College of Engineering, Al-Mustansiriya University, Baghdad, Ahmed, Naser M., E-mail: naser@usm.my, Hassan, Z., E-mail: zai@usm.my, Azzez, Shrook A., Rasheed, Hiba S., E-mail: hibasaad1980@yahoo.com, Department of Physics, College of Education, Al-Mustansiriya University, Baghdad, Al-Hazim, Nabeel Z., E-mail: nabeelnano333@gmail.com, and Ministry of Education, the General Directorate for Educational Anbar. 2016. "CuS p-type thin film characterization deposited on Ti, ITO and glass substrates using spray pyrolysis deposition (SPD) for light emitting diode (LED) application". United States. doi:10.1063/1.4948839.
@article{osti_22608586,
title = {CuS p-type thin film characterization deposited on Ti, ITO and glass substrates using spray pyrolysis deposition (SPD) for light emitting diode (LED) application},
author = {Sabah, Fayroz A., E-mail: fayroz-arif@yahoo.com and Department of Electrical Engineering, College of Engineering, Al-Mustansiriya University, Baghdad and Ahmed, Naser M., E-mail: naser@usm.my and Hassan, Z., E-mail: zai@usm.my and Azzez, Shrook A. and Rasheed, Hiba S., E-mail: hibasaad1980@yahoo.com and Department of Physics, College of Education, Al-Mustansiriya University, Baghdad and Al-Hazim, Nabeel Z., E-mail: nabeelnano333@gmail.com and Ministry of Education, the General Directorate for Educational Anbar},
abstractNote = {The copper sulphide (CuS) thin films were grown with good adhesion by spray pyrolysis deposition (SPD) on Ti, ITO and glass substrates at 200 °C. The distance between nozzle and substrate is 30 cm. The composition was prepared by mixing copper chloride CuCl{sub 2}.2H{sub 2}O as a source of Cu{sup 2+} and sodium thiosulfate Na{sub 2}S{sub 2}O{sub 3}.5H{sub 2}O as a source of and S{sup 2−}. Two concentrations (0.2 and 0.4 M) were used for each CuCl{sub 2} and Na{sub 2}S{sub 2}O{sub 3} to be prepared and then sprayed (20 ml). The process was started by spraying the solution for 3 seconds and after 10 seconds the cycle was repeated until the solution was sprayed completely on the hot substrates. The structural characteristics were studied using X-ray diffraction; they showed covellite CuS hexagonal crystal structure for 0.2 M concentration, and covellite CuS hexagonal crystal structure with two small peaks of chalcocite Cu{sub 2}S hexagonal crystal structure for 0.4 M concentration. Also the surface and electrical characteristics were investigated using Field Emission Scanning Electron Microscopy (FESEM) and current source device, respectively. The surface study for the CuS thin films showed nanorods to be established for 0.2 M concentration and mix of nanorods and nanoplates for 0.4 M concentration. The electrical study showed ohmic behavior and low resistivity for these films. Hall Effect was measured for these thin films, it showed that all samples of CuS are p- type thin films and ensured that the resistivity for thin films of 0.2 M concentration was lower than that of 0.4 M concentration; and for the two concentrations CuS thin film deposited on ITO had the lowest resistivity. This leads to the result that the conductivity was high for CuS thin film deposited on ITO substrate, and the conductivity of the three thin films of 0.2 M concentration was higher than that of 0.4 M concentration.},
doi = {10.1063/1.4948839},
journal = {AIP Conference Proceedings},
number = 1,
volume = 1733,
place = {United States},
year = 2016,
month = 7
}
  • Gallium nitride GaN thin films were deposited on three different substrates; Si (111), Si (100) and ITO coated glass using electrochemical deposition technique at 20 Degree-Sign C. A mixture of gallium nitrate, ammonium nitrate was used as electrolyte. The deposited films were investigated at room temperature by a series of material characterization techniques, namely; scanning electron microscopy (SEM), EDX and X-ray diffraction (XRD). SEM images and EDX results indicated that the growth of GaN films varies according to the substrates. XRD analyses showed the presence of hexagonal wurtzite and cubic zinc blende GaN phases with the crystallite size around 18-29more » nm.« less
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  • Vanadium oxide (V{sub 2}O{sub 5}) thin films were deposited on glass substrates by using a cost-efficient spray pyrolysis technique. The films were grown at 350° through thermal decomposition of VCl{sub 3} in deionized water with different solution spray rates. The high resolution X-ray diffraction results revealed the formation of nanocrystalline films having orthorhombic structures with preferential orientation along (101) direction. The spray rate influenced the surface morphology and crystallite size of the films. The crystallite size was found to increase whereas the micro-strain was decreased by increasing the spray deposition rates. The increase in crystallite size and decrease in themore » macrostrain resulted in an improvement in the films’ crystallinity. The UV-Visible spectroscopy analysis indicated that the average transmittance of all films lies in the range 75-80 %. The band gap of V{sub 2}O{sub 5} film was decreased from 2.65 to 2.46 eV with increase of the spray deposition rate from 5 ml/min to 10 ml/min. first, second, and third level headings (first level heading).« less
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  • In this work, (ZnO){sub x}:(TiO{sub 2}){sub 1-x} nano composites thin films, with x = 1, 0.75, 0.5, 0.25, and 0, have been prepared by sol–gel spray coating technique onto glass substrate. Pure TiO{sub 2} and ZnO thin films were synthesized from titanium isopropoxide-based and zinc acetate-based precursor solutions, respectively, whereas the composite films were obtained from the mixture of these solutions at the specific % vol ratios. The properties and performance of nano composite ZnO, TiO{sub 2} and ZnO:TiO{sub 2} thin films at different composition have been investigated. Ultraviolet – Visible (UV-Vis) Spectrophotometer and Scanning Electron Microscopy (SEM) were employedmore » in order to get morphology and transmittance of thin films. Testing the ability of photocatalytic activity of obtained films was conducted on photodegradation of methylene blue (MB) dye and organic pollutants of wastewater under a 30 watt UV light irradiation, then testing BOD, COD and TPC were conducted. Using the Tauc model, the band-gap energy decreased from 3.12 eV to 3.02 eV for the sample with x = 1 and 0, respectively. This decrease occured along with the replacement of percentage of ZnO by TiO{sub 2} on the films. This decrease also reduced the minimum energy that required for electron excitation. Obtained thin films had nanoscale roughness level with range 3.64 to 17.30 nm. The film with x= 0 has the biggest removal percentage on BOD, COD and TPC mesurements with percentage 54.82%, 62.73% and 99.88%, respectively.« less