The influence of H{sub 2}O{sub 2} concentration to the structure of silicon nanowire growth by metal-assisted chemical etching

Journal Article · Wed Jul 06 04:00:00 EDT 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4948834· OSTI ID:22608582

Omar, Hafsa ^[1]; Abdullah, Saifollah ^[2]; Rusop, Mohamad ^[1]

---

1. NANO-SciTech Centre, Institute of Science, Universiti Teknologi MARA(UiTM), 40450 Shah Alam, Selangor (Malaysia)
2. Faculty of Applied Sciences, Universiti Teknologi MARA(UiTM), 40450 Shah Alam, Selangor (Malaysia)

A simple and low cost method to produce well aligned silicon nanowires at large areas using Ag-assisted chemical etching at room temperature were presented. The structure of silicon nanowires growth by metal-assisted chemical etching was observed. Prior to the etching, the silicon nanowires were prepared by electroless metal deposited (EMD) in solution containing hydrofluoric acid and hydrogen peroxide in Teflon vessel. The silver particle was deposited on substrate by immersion in hydrofluoric acid and silver nitrate solution for sixty second. The silicon nanowires were growth in different hydrogen peroxide concentration which are 0.3M, 0.4M, 0.5M and 0.6M and 0.7M.The influence of hydrogen peroxide concentration to the formation of silicon nanowires was studied. The morphological properties of silicon nanowires were investigated using field emission scanning electron microscopy (FESEM) and Energy Dispersive X-Ray Spectroscopy (EDS).

• OSTI ID: 22608582
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1733; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CONCENTRATION RATIO
CONTAINERS
ELECTRON SCANNING
FIELD EMISSION
HYDROFLUORIC ACID
HYDROGEN
HYDROGEN PEROXIDE
NANOWIRES
SCANNING ELECTRON MICROSCOPY
SILICON
SILVER
SILVER NITRATES
SUBSTRATES
TEFLON
TEMPERATURE RANGE 0273-0400 K
X-RAY SPECTROSCOPY