Electrowetting properties of atomic layer deposited Al{sub 2}O{sub 3} decorated silicon nanowires

Journal Article · Wed Jun 24 04:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4917710· OSTI ID:22490261

Rajkumar, K.; Rajavel, K. ^[1]; Cameron, D. C. ^[2]; Mangalaraj, D. ^[3]

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1. Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu (India)
2. ASTRaL, Lappeenranta University of Technology, Mikkeli (Finland)
3. Department of NanoScience and Technology, Bharathiar University, Coimbatore, Tamil Nadu (India)

This paper reports the electrowetting properties of liquid droplet on superhydrophobic silicon nanowires with Atomic layer deposited (ALD) Al{sub 2}O{sub 3} as dielectric layer. Silicon wafer were etched by metal assisted wet chemical etching with silver as catalyst. ALD Al{sub 2}O{sub 3} films of 10nm thickness were conformally deposited over silicon nanowires. Al{sub 2}O{sub 3} dielectric film coated silicon nanowires was chemically modified with Trichloro (1H, 1H, 2H, 2H-perfluorooctyl) silane to make it superhydrophobic(SHP). The contact angle was measured and all the samples exhibited superhydrophobic nature with maximum contact angles of 163° and a minimum contact angle hysteresis of 6°. Electrowetting induced a maximum reversible decrease of the contact angle of 20°at 150V in air.

• OSTI ID: 22490261
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1665; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AIR
ALUMINIUM OXIDES
CATALYSTS
DEPOSITION
DIELECTRIC MATERIALS
DROPLETS
ETCHING
FILMS
HYDROGEN 1
HYSTERESIS
LAYERS
LIQUIDS
NANOWIRES
SILANES
SILICON
SILVER