Projection x-ray topography system at 1-BM x-ray optics test beamline at the advanced photon source

Journal Article · Wed Jul 27 04:00:00 EDT 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4952938· OSTI ID:22608442

Stoupin, Stanislav; Liu, Zunping; Trakhtenberg, Emil; Lang, Keenan; Goetze, Kurt; Sullivan, Joseph; Macrander, Albert ^[1]; Raghothamachar, Balaji; Dudley, Michael ^[2]

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1. Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439 (United States)
2. Department of Materials Science & Engineering, Stony Brook University, Stony Brook, NY 11794 (United States)

Projection X-ray topography of single crystals is a classic technique for the evaluation of intrinsic crystal quality of large crystals. In this technique a crystal sample and an area detector (e.g., X-ray film) collecting intensity of a chosen crystallographic reflection are translated simultaneously across an X-ray beam collimated in the diffraction scattering plane (e.g., [1, 2]). A bending magnet beamline of a third-generation synchrotron source delivering x-ray beam with a large horizontal divergence, and therefore, a large horizontal beam size at a crystal sample position offers an opportunity to obtain X-ray topographs of large crystalline samples (e.g., 6-inch wafers) in just a few exposures. Here we report projection X-ray topography system implemented recently at 1-BM beamline of the Advanced Photon Source. A selected X-ray topograph of a 6-inch wafer of 4H-SiC illustrates capabilities and limitations of the technique.

• OSTI ID: 22608442
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1741; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
ADVANCED PHOTON SOURCE
BEAM OPTICS
CRYSTALLOGRAPHY
DIFFRACTION
FILMS
MONOCRYSTALS
PHOTONS
REFLECTION
SILICON
SILICON CARBIDES
SYNCHROTRONS
TOPOGRAPHY
X RADIATION