Effect of low temperature oxidation (LTO) in reducing boron skin in boron spin on dopant diffused emitter

Journal Article · Fri May 06 00:00:00 EDT 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4946725· OSTI ID:22606678

Singha, Bandana; Solanki, Chetan Singh ^[1]

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1. Department of Energy Science and Technology, Indian Institute of Technology, Bombay Mumbai-400076, Maharashtra (India)

Formation of boron skin is an unavoidable phenomenon in p-type emitter formation with boron dopant source. The boron skin thickness is generally less than 100 nm and difficult to remove by chemical and physical means. Low temperature oxidation (LTO) used in this work is useful in removing boron skin thickness up to 30 nm and improves the emitter performance. The effective minority carrier lifetime gets improved by more than 30% after using LTO and leakage current of the emitter gets lowered by 100 times thereby showing the importance of low temperature oxidation in boron spin on dopant diffused emitters.

• OSTI ID: 22606678
• Journal Information: AIP Conference Proceedings, Vol. 1728, Issue 1; Conference: ICC 2015: International conference on condensed matter and applied physics, Bikaner (India), 30-31 Oct 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BORON
CARRIER LIFETIME
CARRIERS
DOPED MATERIALS
LEAKAGE CURRENT
LEAKS
OXIDATION
SPIN
THICKNESS