Bias voltage dependent field-emission energy distribution analysis of wide band-gap field emitters
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States)
We have studied the origin of field emission from wide band-gap semiconductors by a combination of voltage dependent field-emission energy distribution and I{endash}V measurements. For this purpose, tip-shaped molybdenum emitters were coated with 100{endash}1000 nm thick layers of nominally undoped diamond and cubic boron nitride (c-BN) powders. Electron energy spectra revealed that significant band bending occurred due to field penetration into wide band-gap materials. Voltage drops on the order of several volts were measured across the coatings, for applied voltages on the order of 1 kV, and a cathode{endash}gate distance of 500 {mu}m. These voltage drops showed a linear dependence with the applied bias voltage for well-annealed diamond coatings and a strongly nonlinear behavior for unannealed diamond and c-BN coatings. In general, annealing of diamond coated Mo tips led to improved emission current stability and lower {open_quotes}turn-on{close_quotes} voltages due to the removal of oxide and the formation of conductive carbide layers between the metal and semiconductor. From the extrapolation of the linear behavior to the flat-band condition, we concluded that the emission from diamond, as well as c-BN, originated from the conduction-band minimum. Nonlinear behavior was attributed to positive space-charge accumulation at the field-emitting surface, which arose due to electron depletion by field emission from wide band-gap material. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 552970
- Journal Information:
- Journal of Applied Physics, Vol. 82, Issue 11; Other Information: PBD: Dec 1997
- Country of Publication:
- United States
- Language:
- English
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