SHI induced defects in chemically synthesized graphene oxide for hydrogen storage applications

Journal Article · Fri May 06 04:00:00 EDT 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4946582· OSTI ID:22606577

Sharma, Vinay; Rajaura, Rajveer Singh; Singh, M. ^[1]; Srivastava, Subodh; Vijay, Y. K. ^[1]; Sharma, S. S. ^[2]

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1. Department of Physics, University of Rajasthan, Jaipur-302004, India. (India)
2. Department of Physics, Govt. Women Engineering College, Ajmer-305002, India. (India)

Graphene, due to its unique properties arising from the single carbon layer, is a potential candidate for applications in a variety of fields including sensors, photovoltaics and energy storage. The atomic structure and morphology of the carbon nanomaterials especially graphene can be tailored by energetic ionic irradiation. As graphene sheet is very stable, the surface have less reactivity as compared to the edges of the sheets. By surface modification with energetic ion-beams additional dangling bonds can be formed to enhance the surface activity of the graphene film which could be exploited in a variety of applications. In the present work, graphene oxide was synthesized by improved Hummers’ Method. The irradiation was done with Ag{sup +} ions carrying energy 100 MeV with the fluence of 3×10{sup 13}. Raman spectrum of graphene irradiated by Ag{sup +} beam shows additional disordered peaks of D´ and D+G bands. There is also a decrease in the intensity of D band. AFM images depict the increase in the surface roughness of the films. This can be attributed to the increase in the defects in the flakes and intermixing of adjacent layers by irradiation.

• OSTI ID: 22606577
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1728; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ATOMIC FORCE MICROSCOPY
DEFECTS
ENERGY STORAGE
FILMS
GRAPHENE
HYDROGEN STORAGE
ION BEAMS
IRRADIATION
LAYERS
MEV RANGE 10-100
NANOMATERIALS
OXIDES
PHOTOVOLTAIC EFFECT
RAMAN SPECTRA
SENSORS
SILVER IONS
TAIL IONS