Crystalline to amorphous phase transition of tin oxide nanocrystals induced by SHI at low temperature

Journal Article · Tue Jun 05 04:00:00 EDT 2012 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4710203· OSTI ID:22004139

Kumar, Vijay; Pratap, Deepti; Jain, Anshul; Agarwal, D C; Sulania, I; Tripathi, A; Chaudhary, R J; Chauhan, R S ^[1]

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1. Department of Physics, R.B.S. College, Agra, U.P.,-282 002 (India)

Tin oxide (SnO{sub 2}) thin films were deposited using pulsed laser deposition (PLD) technique on Si substrates. The as-deposited films were irradiated using 100 MeV Ag ions at different fluences ranging from 3x10{sup 13} to 3x10{sup 14} ions/cm{sup 2} at an incidence angle of 75 deg. with respect to surface normal at liquid nitrogen (LN2) temperature. The as-deposited and irradiated films have been characterized using X-ray diffraction (XRD) and atomic force microscopy (AFM) techniques to study the modifications in structural and surface morphological properties. Nanocrystalline film become completely amorphous and nanograins of tin oxide disappeared from the surface as indicated by XRD spectra and AFM micrographs respectively.

• OSTI ID: 22004139
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1447; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
ATOMIC FORCE MICROSCOPY
CRYSTALS
ENERGY BEAM DEPOSITION
INCIDENCE ANGLE
ION BEAMS
LASER RADIATION
MODIFICATIONS
MORPHOLOGY
NANOSTRUCTURES
PULSED IRRADIATION
SILICON
SILVER IONS
SUBSTRATES
THIN FILMS
TIN OXIDES
X-RAY DIFFRACTION