Dark and photo conductivity analysis of Cu doped CdSe-PVA nanocomposites synthesized by chemical route

Journal Article · Fri May 06 00:00:00 EDT 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4946450· OSTI ID:22606487

Rani, Amita ^[1]; Kurchania, Rajnish ^[2]; Kaur, Ramneek ^[3]; Singh, Mahender ^[4]

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1. Department of Physics, Barkatullah University Bhopal-462026 (India)
2. Department of Physics, Maulana Azad National Institute of Technology, Bhopal-462003 (India)
3. Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh-160 014 (India)
4. Department of Physics, Motilal Vigyan Mahavidyalaya, Bhopal-462008 (India)

Present communication deals with the study of electrical conductivity measurements of Cu doped CdSe-PVA nanocomposite via chemical method. In electrical measurements, the dark conductivity (σ{sub d}) and the photoconductivity (σ{sub ph}) of CdSe prepared thin films have been studied in the temperature range of 308–343 K. The effect of temperature and the intensity on conductivity has been analyzed for CdSe and CdSe:Cu nanocomposite films. The conductivity of all the samples increases with increasing temperature indicating the semiconducting behavior of the samples. The value of photo activation energy is less than the dark activation energy due to the shift in energy levels under illumination.

• OSTI ID: 22606487
• Journal Information: AIP Conference Proceedings, Vol. 1728, Issue 1; Conference: ICC 2015: International conference on condensed matter and applied physics, Bikaner (India), 30-31 Oct 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ACTIVATION ENERGY
CADMIUM SELENIDES
COMMUNICATIONS
COPPER ADDITIONS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ENERGY LEVELS
ILLUMINANCE
NANOCOMPOSITES
PHOTOCONDUCTIVITY
PVA
TEMPERATURE RANGE
THIN FILMS