Fabrication of frequency selective surface for band stop IR-filter
- Department of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi-110016 (India)
- Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India)
- High Pressure and Synchrotrons Radiation Division, Bhabha Atomic Research Centre, Mumbai-400085 (India)
Fabrication and characterization of frequency selective surfaces (FSS) on silicon dioxide/ silicon is reported. Electron beam lithography based techniques are used for the fabrication of periodic slot structure in tungsten layer on silicon dioxide/silicon. The fabrication process consists of growth of SiO{sub 2} on silicon, tungsten deposition, electron beam lithography, and wet etching of tungsten. The optical characterization of the structural pattern was carried out using fourier transform infrared spectroscopy (FTIR). The reflectance spectra clearly show a resonance peak at 9.09 µm in the mid infrared region. This indicates that the patterned surface acts as band stop filter in the mid-infrared region.
- OSTI ID:
- 22606297
- Journal Information:
- AIP Conference Proceedings, Vol. 1731, Issue 1; Conference: DAE solid state physics symposium 2015, Uttar Pradesh (India), 21-25 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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