Highly conducting and preferred <220> oriented boron doped nc–Si films for window layers in nc–Si solar cells

Journal Article · Mon May 23 00:00:00 EDT 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4947691· OSTI ID:22606284

Mondal, Praloy; Das, Debajyoti ^[1]

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1. Nano-Science Group, Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata – 700 032 (India)

Growth and optimization of the boron dopednanocrystalline silicon (nc-Si) films have been studied by varyingthe gaspressure applied to the hydrogendiluted silane plasma in RF (13.56 MHz) plasma-enhanced chemical vapor deposition (PECVD) system, using diborane (B{sub 2}H{sub 6}) as the dopant gas. High magnitudeof electrical conductivity (~10{sup 2} S cm{sup −1}) and<220>orientedcrystallographic lattice planes have been obtained with high crystalline volume fraction (~86 %) at an optimum pressure of 2.5 Torr. XRD and Raman studies reveal good crystallinity with preferred orientation, suitable for applications in stacked layer devices, particularly in nc–Si solar cells.

• OSTI ID: 22606284
• Journal Information: AIP Conference Proceedings, Vol. 1731, Issue 1; Conference: DAE solid state physics symposium 2015, Uttar Pradesh (India), 21-25 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
BORANES
BORON ADDITIONS
BORON HYDRIDES
CHEMICAL VAPOR DEPOSITION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
FILMS
GRAIN ORIENTATION
LAYERS
NANOSTRUCTURES
SILANES
SILICON
SOLAR CELLS
X-RAY DIFFRACTION