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Title: Effect of Bi doping on morphotropic phase boundary and dielectric properties of PZT

Abstract

In our present attempt, Pb{sub (1-x)}Bi{sub x}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} [PBZT] {where x = 0, 0.05, 0.1} is synthesized by sol-gel route. Effect of Bi addition on structure, sinterability and dielectric properties are observed. The presence of morphotropic phase boundary (coexistence of tetragonal and rhombohedral symmetry) is confirmed by X-ray diffraction. Enhancement of sinterability after Bi doping is observed through a systematic sintering program. Frequency and temperature dependent dielectric constant are studied. Bi doping in PZT is found to enhance room temperature dielectric constant. However, at high temperature the dielectric constant of pure PZT is more than that of doped PZT.

Authors:
;  [1]
  1. Advanced Materials Research Laboratory, Department of Physics, Rashtrasant Tukadoji Maharaj Nagpur University, Nagpur-440033, M.S. India (India)
Publication Date:
OSTI Identifier:
22606233
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1731; Journal Issue: 1; Conference: DAE solid state physics symposium 2015, Uttar Pradesh (India), 21-25 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BISMUTH ADDITIONS; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; DOPED MATERIALS; PERMITTIVITY; PZT; SINTERING; SOL-GEL PROCESS; SYMMETRY; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TRIGONAL LATTICES; X RADIATION; X-RAY DIFFRACTION

Citation Formats

Joshi, Shraddha, and Acharya, Smita. Effect of Bi doping on morphotropic phase boundary and dielectric properties of PZT. United States: N. p., 2016. Web. doi:10.1063/1.4947618.
Joshi, Shraddha, & Acharya, Smita. Effect of Bi doping on morphotropic phase boundary and dielectric properties of PZT. United States. doi:10.1063/1.4947618.
Joshi, Shraddha, and Acharya, Smita. Mon . "Effect of Bi doping on morphotropic phase boundary and dielectric properties of PZT". United States. doi:10.1063/1.4947618.
@article{osti_22606233,
title = {Effect of Bi doping on morphotropic phase boundary and dielectric properties of PZT},
author = {Joshi, Shraddha and Acharya, Smita},
abstractNote = {In our present attempt, Pb{sub (1-x)}Bi{sub x}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} [PBZT] {where x = 0, 0.05, 0.1} is synthesized by sol-gel route. Effect of Bi addition on structure, sinterability and dielectric properties are observed. The presence of morphotropic phase boundary (coexistence of tetragonal and rhombohedral symmetry) is confirmed by X-ray diffraction. Enhancement of sinterability after Bi doping is observed through a systematic sintering program. Frequency and temperature dependent dielectric constant are studied. Bi doping in PZT is found to enhance room temperature dielectric constant. However, at high temperature the dielectric constant of pure PZT is more than that of doped PZT.},
doi = {10.1063/1.4947618},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1731,
place = {United States},
year = {2016},
month = {5}
}