Sol-gel derived PZT films doped with vanadium pentoxide
Journal Article
·
· Materials Research Bulletin
- Department of Mechanic Engineering, University of Washington, Seattle, WA 98195 (United States)
- Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195 (United States)
The present research investigated the sol-gel preparation, dielectric and ferroelectric properties of PZT films doped with 5 mol% vanadium oxide. Stable PZTV sols can be readily formed, and homogeneous, micrometer thick and pinhole-free PZTV films were obtained by using spin coating followed with rapid annealing. The X-ray diffraction patterns revealed that no parasitic or secondary phases were formed in the sol-gel PZT films with the addition of vanadium oxide. The material doped with vanadium pentoxide showed enhanced dielectric constant and remanent polarization with reduced loss tangent and coercive field.
- OSTI ID:
- 22029764
- Journal Information:
- Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 11 Vol. 44; ISSN MRBUAC; ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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