Spin-splitting in p-type Ge devices

Journal Article · Sun Aug 28 04:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4961416· OSTI ID:22598889

Newton, P. J.; Llandro, J.; Mansell, R.; Barnes, C. H. W. ^[1]; Morrison, C.; Myronov, M. ^[2]

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1. Cavendish Laboratory, Department of Physics, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom)
2. Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

Compressively strained Ge quantum well devices have a spin-splitting in applied magnetic field that is entirely consistent with a Zeeman effect in the heavy hole valence band. The spin orientation is determined by the biaxial strain in the quantum well with the relaxed SiGe buffer layers and is quantized in the growth direction perpendicular to the conducting channel. The measured spin-splitting in the resistivity ρ{sub xx} agrees with the predictions of the Zeeman Hamiltonian where the Shubnikov-deHaas effect exhibits a loss of even filling factor minima in the resistivity ρ{sub xx} with hole depletion from a gate field, increasing disorder or increasing temperature. There is no measurable Rashba spin-orbit coupling irrespective of the structural inversion asymmetry of the confining potential in low p-doped or undoped Ge quantum wells from a density of 6 × 10{sup 10} cm{sup −2} in depletion mode to 1.7 × 10{sup 11} cm{sup −2} in enhancement.

• OSTI ID: 22598889
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 120; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ASYMMETRY
BUFFERS
DOPED MATERIALS
FORECASTING
GERMANIUM SILICIDES
HAMILTONIANS
L-S COUPLING
LAYERS
MAGNETIC FIELDS
P-TYPE CONDUCTORS
QUANTUM WELLS
SHUBNIKOV-DE HAAS EFFECT
SPIN
SPIN ORIENTATION
ZEEMAN EFFECT