Fast in-situ photoluminescence analysis for a recombination parameterization of the fast BO defect component in silicon
- Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg im Breisgau (Germany)
Light-induced degradation due to BO defects in silicon consists of a fast initial decay within a few seconds followed by a slower decay within hours to days. Determination of injection dependent charge carrier lifetime curves during the initial decay is challenging due to this short timeframe. We have developed a suitable measurement technique based on in situ photoluminescence measurements and present results of our studies of the fast degradation component. The temporal evolution of the recombination activity is studied and assessed by means of a two-level Shockley-Read-Hall statistics. A quadratic dependence of the fast defect activation on the hole concentration during illumination is demonstrated. We suggest a new parameterization of the recombination activity introduced by fast-formed BO defects featuring energy levels 0.34 eV below the conduction band and 0.31 eV above the valence band. The capture asymmetry ratio determined for the donor level of 18.1 is significantly smaller than previous parameterizations in literature suggest.
- OSTI ID:
- 22598849
- Journal Information:
- Journal of Applied Physics, Vol. 120, Issue 8; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Near surface inversion layer recombination in Al{sub 2}O{sub 3} passivated n-type silicon
Large-Area (Ag,Cu)(In,Ga)Se2 Thin-Film Solar Cells with Increased Bandgap and Reduced Voltage Losses Realized with Bulk Defect Reduction and Front-Grading of the Absorber Bandgap