Large-Area (Ag,Cu)(In,Ga)Se2 Thin-Film Solar Cells with Increased Bandgap and Reduced Voltage Losses Realized with Bulk Defect Reduction and Front-Grading of the Absorber Bandgap
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- MiaSolé Hi-Tech Corp., Santa Clara, CA (United States)
- The Ohio State Univ., Columbus, OH (United States)
- Colorado School of Mines, Golden, CO (United States)
- Colorado School of Mines Golden CO 80401 USA
The 1.24 eV bandgap, 18.8% power conversion efficiency Ag-alloyed chalcopyrite (Ag,Cu)(In,Ga)Se2 (ACIGS) solar cells are characterized to relate voltage and efficiency improvements to electro-optical (EO) characteristics. Shockley-Read-Hall recombination center defect density, identified and characterized through deep level transient spectroscopy and time-resolved photoluminescence (TRPL), is reduced through potassium and copper treatment optimization. Concomitantly, longer minority carrier lifetimes are achieved, which increases open-circuit voltage (VOC). Near-conduction band defects associated in earlier studies with light-induced current instability are also mitigated. Analysis of charge-carrier dynamics after single- and two-photon excitation is used to separate recombination at the front interface and in the absorber bulk. From TRPL decay simulations, the authors estimate ranges of key solar cell material characteristics: bulk carrier lifetime Tbulk = 110-210 ns, charge-carrier mobility u = 110-160 cm2 V-1 s-1, and front interface recombination velocity Sfront = 700-1050 cm s-1. This lowest-reported Sfront for ACIGS absorbers originates from the notched conduction band grading, which also makes the impact of the back interface recombination negligible. It is suggested in the results that solar cell performance enhancements can be made most readily with two distinct strategies: improving device architecture and reducing semiconductor defect densities. Using these approaches, power conversion efficiency in large-area solar cells is improved by 1.1% absolute.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office
- Grant/Contract Number:
- AC36-08GO28308; EE0008755
- OSTI ID:
- 1869796
- Report Number(s):
- NREL/JA-5900-82727; MainId:83500; UUID:660a31f3-4837-461f-9304-a75e5d81ce5d; MainAdminID:64571
- Journal Information:
- Solar RRL, Journal Name: Solar RRL Journal Issue: 8 Vol. 6; ISSN 2367-198X
- Publisher:
- WileyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
Nonradiative Recombination Dominates Voltage Losses in Cu(In,Ga)Se
2
Solar Cells Fabricated using Different Methods
Charge Carrier Lifetime Determination in Graded Absorber Solar Cells Using Time‐Resolved Photoluminescence Simulations and Measurements
Journal Article
·
Wed Apr 19 20:00:00 EDT 2023
· Solar RRL
·
OSTI ID:1970804
Charge Carrier Lifetime Determination in Graded Absorber Solar Cells Using Time‐Resolved Photoluminescence Simulations and Measurements
Journal Article
·
Mon Feb 27 19:00:00 EST 2023
· Solar RRL
·
OSTI ID:1959083