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Title: Electrical characteristics of SrTiO{sub 3}/Al{sub 2}O{sub 3} laminated film capacitors

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4958307· OSTI ID:22597849
; ; ; ;  [1]
  1. Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai 200092 (China)

The electrical characteristics of SrTiO{sub 3}/Al{sub 2}O{sub 3} (160 nm up/90 nm down) laminated film capacitors using the sol-gel process have been investigated. SrTiO{sub 3} is a promising and extensively studied high-K dielectric material, but its leakage current property is poor. SrTiO{sub 3}/Al{sub 2}O{sub 3} laminated films can effectively suppress the demerits of pure SrTiO{sub 3} films under low electric field, but the leakage current value reaches to 0.1 A/cm{sup 2} at higher electric field (>160 MV/m). In this study, a new approach was applied to reduce the leakage current and improve the dielectric strength of SrTiO{sub 3}/Al{sub 2}O{sub 3} laminated films. Compared to laminated films with Au top electrodes, dielectric strength of laminated films with Al top electrodes improves from 205 MV/m to 322 MV/m, simultaneously the leakage current maintains the same order of magnitude (10{sup −4} A/cm{sup 2}) until the breakdown occurs. The above electrical characteristics are attributed to the anodic oxidation reaction in origin, which can repair the defects of laminated films at higher electric field. The anodic oxidation reactions have been confirmed by the corresponding XPS measurement and the cross sectional HRTEM analysis. This work provides a new approach to fabricate dielectrics with high dielectric strength and low leakage current.

OSTI ID:
22597849
Journal Information:
Journal of Applied Physics, Vol. 120, Issue 1; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English