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Title: Electrical characteristics of SrTiO{sub 3}/Al{sub 2}O{sub 3} laminated film capacitors

Abstract

The electrical characteristics of SrTiO{sub 3}/Al{sub 2}O{sub 3} (160 nm up/90 nm down) laminated film capacitors using the sol-gel process have been investigated. SrTiO{sub 3} is a promising and extensively studied high-K dielectric material, but its leakage current property is poor. SrTiO{sub 3}/Al{sub 2}O{sub 3} laminated films can effectively suppress the demerits of pure SrTiO{sub 3} films under low electric field, but the leakage current value reaches to 0.1 A/cm{sup 2} at higher electric field (>160 MV/m). In this study, a new approach was applied to reduce the leakage current and improve the dielectric strength of SrTiO{sub 3}/Al{sub 2}O{sub 3} laminated films. Compared to laminated films with Au top electrodes, dielectric strength of laminated films with Al top electrodes improves from 205 MV/m to 322 MV/m, simultaneously the leakage current maintains the same order of magnitude (10{sup −4} A/cm{sup 2}) until the breakdown occurs. The above electrical characteristics are attributed to the anodic oxidation reaction in origin, which can repair the defects of laminated films at higher electric field. The anodic oxidation reactions have been confirmed by the corresponding XPS measurement and the cross sectional HRTEM analysis. This work provides a new approach to fabricate dielectrics with high dielectric strength and low leakage current.

Authors:
; ; ; ;  [1]
  1. Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai 200092 (China)
Publication Date:
OSTI Identifier:
22597849
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 120; Journal Issue: 1; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; BREAKDOWN; CAPACITORS; COMPARATIVE EVALUATIONS; DEFECTS; DIELECTRIC MATERIALS; ELECTRIC FIELDS; ELECTRODES; FILMS; LEAKAGE CURRENT; OXIDATION; SOL-GEL PROCESS; STRONTIUM TITANATES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Peng, Yong, Yao, Manwen, E-mail: yaomw@tongji.edu.cn, Chen, Jianwen, Xu, Kaien, and Yao, Xi. Electrical characteristics of SrTiO{sub 3}/Al{sub 2}O{sub 3} laminated film capacitors. United States: N. p., 2016. Web. doi:10.1063/1.4958307.
Peng, Yong, Yao, Manwen, E-mail: yaomw@tongji.edu.cn, Chen, Jianwen, Xu, Kaien, & Yao, Xi. Electrical characteristics of SrTiO{sub 3}/Al{sub 2}O{sub 3} laminated film capacitors. United States. doi:10.1063/1.4958307.
Peng, Yong, Yao, Manwen, E-mail: yaomw@tongji.edu.cn, Chen, Jianwen, Xu, Kaien, and Yao, Xi. Thu . "Electrical characteristics of SrTiO{sub 3}/Al{sub 2}O{sub 3} laminated film capacitors". United States. doi:10.1063/1.4958307.
@article{osti_22597849,
title = {Electrical characteristics of SrTiO{sub 3}/Al{sub 2}O{sub 3} laminated film capacitors},
author = {Peng, Yong and Yao, Manwen, E-mail: yaomw@tongji.edu.cn and Chen, Jianwen and Xu, Kaien and Yao, Xi},
abstractNote = {The electrical characteristics of SrTiO{sub 3}/Al{sub 2}O{sub 3} (160 nm up/90 nm down) laminated film capacitors using the sol-gel process have been investigated. SrTiO{sub 3} is a promising and extensively studied high-K dielectric material, but its leakage current property is poor. SrTiO{sub 3}/Al{sub 2}O{sub 3} laminated films can effectively suppress the demerits of pure SrTiO{sub 3} films under low electric field, but the leakage current value reaches to 0.1 A/cm{sup 2} at higher electric field (>160 MV/m). In this study, a new approach was applied to reduce the leakage current and improve the dielectric strength of SrTiO{sub 3}/Al{sub 2}O{sub 3} laminated films. Compared to laminated films with Au top electrodes, dielectric strength of laminated films with Al top electrodes improves from 205 MV/m to 322 MV/m, simultaneously the leakage current maintains the same order of magnitude (10{sup −4} A/cm{sup 2}) until the breakdown occurs. The above electrical characteristics are attributed to the anodic oxidation reaction in origin, which can repair the defects of laminated films at higher electric field. The anodic oxidation reactions have been confirmed by the corresponding XPS measurement and the cross sectional HRTEM analysis. This work provides a new approach to fabricate dielectrics with high dielectric strength and low leakage current.},
doi = {10.1063/1.4958307},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 1,
volume = 120,
place = {United States},
year = {2016},
month = {7}
}