Formation of periodic interfacial misfit dislocation array at the InSb/GaAs interface via surface anion exchange
- School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)
The relationship between growth temperature and the formation of periodic interfacial misfit (IMF) dislocations via the anion exchange process in InSb/GaAs heteroepitaxy was systematically investigated. The microstructural and electrical properties of the epitaxial layer were characterized using atomic force microscope, high-resolution x-ray diffraction, transmission electron microscopy, and Hall resistance measurement. The formation of interfacial misfit (IMF) dislocation arrays depended on growth temperature. A uniformly distributed IMF array was found in a sample grown at 310 °C, which also exhibited the lowest threading dislocation density. The analysis suggested that an incomplete As-for-Sb anion exchange process impeded the formation of IMF on sample grown above 310 °C. At growth temperature below 310 °C, island coalescence led to the formation of 60° dislocations and the disruption of periodic IMF array. All samples showed higher electron mobility at 300 K than at 77 K.
- OSTI ID:
- 22597828
- Journal Information:
- Journal of Applied Physics, Vol. 120, Issue 3; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANIONS
ATOMIC FORCE MICROSCOPY
DISLOCATIONS
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
ELECTRONS
EPITAXY
GALLIUM ARSENIDES
INDIUM ANTIMONIDES
ION EXCHANGE
MICROSTRUCTURE
PERIODICITY
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION