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Title: Effects of antimony (Sb) on electron trapping near SiO{sub 2}/4H-SiC interfaces

Abstract

To investigate the mechanism by which Sb at the SiO{sub 2}/SiC interface improves the channel mobility of 4H-SiC MOSFETs, 1 MHz capacitance measurements and constant capacitance deep level transient spectroscopy (CCDLTS) measurements were performed on Sb-implanted 4H-SiC MOS capacitors. The measurements reveal a significant concentration of Sb donors near the SiO{sub 2}/SiC interface. Two Sb donor related CCDLTS peaks corresponding to shallow energy levels in SiC were observed close to the SiO{sub 2}/SiC interface. Furthermore, CCDLTS measurements show that the same type of near-interface traps found in conventional dry oxide or NO-annealed capacitors are present in the Sb implanted samples. These are O1 traps, suggested to be carbon dimers substituted for O dimers in SiO{sub 2}, and O2 traps, suggested to be interstitial Si in SiO{sub 2}. However, electron trapping is reduced by a factor of ∼2 in Sb-implanted samples compared with samples with no Sb, primarily at energy levels within 0.2 eV of the SiC conduction band edge. This trap passivation effect is relatively small compared with the Sb-induced counter-doping effect on the MOSFET channel surface, which results in improved channel transport.

Authors:
; ;  [1]; ;  [2]
  1. Physics Department, Simon Fraser University, Burnaby, British Columbia V5A 1S6 (Canada)
  2. Physics Department, Auburn University, Auburn, Alabama 36849 (United States)
Publication Date:
OSTI Identifier:
22597824
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 120; Journal Issue: 3; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANTIMONY; CAPACITANCE; CAPACITORS; CARBON; COMPARATIVE EVALUATIONS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONS; ENERGY LEVELS; HYDROGEN 4; INTERFACES; MOSFET; NITRIC OXIDE; PASSIVATION; SILICA; SILICON; SILICON CARBIDES; SILICON OXIDES; TRAPPING; TRAPS

Citation Formats

Mooney, P. M., Jiang, Zenan, Basile, A. F., Zheng, Yongju, and Dhar, Sarit. Effects of antimony (Sb) on electron trapping near SiO{sub 2}/4H-SiC interfaces. United States: N. p., 2016. Web. doi:10.1063/1.4958852.
Mooney, P. M., Jiang, Zenan, Basile, A. F., Zheng, Yongju, & Dhar, Sarit. Effects of antimony (Sb) on electron trapping near SiO{sub 2}/4H-SiC interfaces. United States. doi:10.1063/1.4958852.
Mooney, P. M., Jiang, Zenan, Basile, A. F., Zheng, Yongju, and Dhar, Sarit. Thu . "Effects of antimony (Sb) on electron trapping near SiO{sub 2}/4H-SiC interfaces". United States. doi:10.1063/1.4958852.
@article{osti_22597824,
title = {Effects of antimony (Sb) on electron trapping near SiO{sub 2}/4H-SiC interfaces},
author = {Mooney, P. M. and Jiang, Zenan and Basile, A. F. and Zheng, Yongju and Dhar, Sarit},
abstractNote = {To investigate the mechanism by which Sb at the SiO{sub 2}/SiC interface improves the channel mobility of 4H-SiC MOSFETs, 1 MHz capacitance measurements and constant capacitance deep level transient spectroscopy (CCDLTS) measurements were performed on Sb-implanted 4H-SiC MOS capacitors. The measurements reveal a significant concentration of Sb donors near the SiO{sub 2}/SiC interface. Two Sb donor related CCDLTS peaks corresponding to shallow energy levels in SiC were observed close to the SiO{sub 2}/SiC interface. Furthermore, CCDLTS measurements show that the same type of near-interface traps found in conventional dry oxide or NO-annealed capacitors are present in the Sb implanted samples. These are O1 traps, suggested to be carbon dimers substituted for O dimers in SiO{sub 2}, and O2 traps, suggested to be interstitial Si in SiO{sub 2}. However, electron trapping is reduced by a factor of ∼2 in Sb-implanted samples compared with samples with no Sb, primarily at energy levels within 0.2 eV of the SiC conduction band edge. This trap passivation effect is relatively small compared with the Sb-induced counter-doping effect on the MOSFET channel surface, which results in improved channel transport.},
doi = {10.1063/1.4958852},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 3,
volume = 120,
place = {United States},
year = {2016},
month = {7}
}