Charge carrier localization effects on the quantum efficiency and operating temperature range of InAs{sub x}P{sub 1−x}/InP quantum well detectors

Journal Article · Mon Mar 07 00:00:00 EST 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4943031· OSTI ID:22597035

Vashisht, Geetanjali; Porwal, S.; Kumar, R.; Sharma, T. K.; Oak, S. M. ^[1]

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1. Semiconductor Physics and Devices Laboratory, Solid State Lasers Division, Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India)

The effect of charge carrier localization resulting in “S-shaped” temperature dependence of the photoluminescence peak energy of InAs{sub x}P{sub 1−x}/InP quantum wells (QWs) is distinctly revealed by the temperature dependent surface photo voltage (SPV) and photoconductivity (PC) processes. It is observed that the escape efficiency of carriers from QWs depends on the localization energy, where the carriers are unable to contribute in SPV/PC signal below a critical temperature. Below the critical temperature, carriers are strongly trapped in the localized states and are therefore unable to escape from the QW. Further, the critical temperature increases with the magnitude of localization energy of carriers. Carrier localization thus plays a pivotal role in defining the operating temperature range of InAs{sub x}P{sub 1−x}/InP QW detectors.

• OSTI ID: 22597035
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 9; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIERS
CHARGE CARRIERS
CRITICAL TEMPERATURE
ELECTRIC POTENTIAL
INDIUM ARSENIDES
INDIUM PHOSPHIDES
PEAKS
PHOTOCONDUCTIVITY
PHOTOLUMINESCENCE
QUANTUM EFFICIENCY
QUANTUM WELLS
SIGNALS
SURFACES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE