2.8 {mu}m emission from type-I quantum wells grown on InAs{sub x}P{sub 1-x}/InP metamorphic graded buffers
- Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)
- Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
We report 2.8 {mu}m emission from compressively strained type-I quantum wells (QWs) grown on InP-based metamorphic InAs{sub x}P{sub 1-x} step-graded buffers. High quality metamorphic graded buffers showed smooth surface morphology and low threading dislocation densities of approximately 2.5 Multiplication-Sign 10{sup 6} cm{sup -2}. High-resolution x-ray diffraction scans showed strong satellites from multiple quantum wells grown on metamorphic buffers, and cross-sectional transmission electron microscopy revealed smooth and coherent quantum well interfaces. Room-temperature photoluminescence emission at 2.8 {mu}m with a narrow linewidth ({approx}50 meV) shows the promise of metamorphic growth for mid-infrared laser diodes on InP.
- OSTI ID:
- 22089620
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 101; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
BUFFERS
DISLOCATIONS
INDIUM ARSENIDES
INDIUM PHOSPHIDES
INTERFACES
LASER RADIATION
MOLECULAR BEAM EPITAXY
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
QUANTUM WELLS
RESOLUTION
SEMICONDUCTOR MATERIALS
SURFACES
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION