Simultaneous specimen current and time-dependent cathodoluminescence measurements on gallium nitride
- School of Electronic Engineering, Bangor University, Gwynedd LL57 1UT (United Kingdom)
- Department of Chemistry and Biochemistry, University of the Science, Philadelphia, Pennsylvania 19104 (United States)
- Department of Electrical and Computer Engineering, Missouri University of Science and Technology, Rolla, Missouri 65409 (United States)
Time-dependent cathodoluminescence (CL) and specimen current (SC) are monitored to evaluate trapping behavior and evolution of charge storage. Examination of CL and SC suggests that the near band edge emission in GaN is reduced primarily by the activation of traps upon irradiation, and Gallium vacancies are prime candidates. At the steady state, measurement of the stored charge by empiric-analytical methods suggests that all available traps within the interaction volume have been filled, and that additional charge is being stored interstitially, necessarily beyond the interaction volume. Once established, the space charge region is responsible for the steady state CL emission and, prior to build up, it is responsible for the generation of diffusion currents. Since the non-recombination effects resulting from diffusion currents that develop early on are analogous to those leading to device failure upon aging, this study is fundamental toward a holistic insight into optical properties in GaN.
- OSTI ID:
- 22596674
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 24; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN [Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial n-GaN]
Microcathodoluminescence of impurity doping at gallium nitride/sapphire interfaces
Related Subjects
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AGING
CATHODOLUMINESCENCE
CURRENTS
DIFFUSION
FAILURES
GALLIUM
GALLIUM NITRIDES
IRRADIATION
OPTICAL PROPERTIES
RECOMBINATION
SPACE CHARGE
STEADY-STATE CONDITIONS
TIME DEPENDENCE
TRAPS
VACANCIES