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Title: Growth and characterization of metamorphic InAs/GaSb tunnel heterojunction on GaAs by molecular beam epitaxy

Abstract

The structural, morphological, optical, and electrical transport characteristics of a metamorphic, broken-gap InAs/GaSb p-i-n tunnel diode structure, grown by molecular beam epitaxy on GaAs, were demonstrated. Precise shutter sequences were implemented for the strain-balanced InAs/GaSb active layer growth on GaAs, as corroborated by high-resolution X-ray analysis. Cross-sectional transmission electron microscopy and detailed micrograph analysis demonstrated strain relaxation primarily via the formation of 90° Lomer misfit dislocations (MDs) exhibiting a 5.6 nm spacing and intermittent 60° MDs at the GaSb/GaAs heterointerface, which was further supported by a minimal lattice tilt of 180 arc sec observed during X-ray analysis. Selective area diffraction and Fast Fourier Transform patterns confirmed the full relaxation of the GaSb buffer layer and quasi-ideal, strain-balanced InAs/GaSb heteroepitaxy. Temperature-dependent photoluminescence measurements demonstrated the optical band gap of the GaSb layer. Strong optical signal at room temperature from this structure supports a high-quality material synthesis. Current–voltage characteristics of fabricated InAs/GaSb p-i-n tunnel diodes measured at 77 K and 290 K demonstrated two bias-dependent transport mechanisms. The Shockley–Read–Hall generation–recombination mechanism at low bias and band-to-band tunneling transport at high bias confirmed the p-i-n tunnel diode operation. This elucidated the importance of defect control in metamorphic InAs/GaSb tunnel diodes for the implementation of low-voltage and high-performancemore » tunnel field effect transistor applications.« less

Authors:
; ;  [1];  [2];  [3]; ;  [4]
  1. Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)
  2. Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
  3. Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
  4. Department of Physics, Virginia Tech, Blacksburg, Virginia 24061 (United States)
Publication Date:
OSTI Identifier:
22596667
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 119; Journal Issue: 24; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BALANCES; DIFFRACTION; DISLOCATIONS; FIELD EFFECT TRANSISTORS; FOURIER TRANSFORM SPECTROMETERS; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; P-N JUNCTIONS; RELAXATION; STRAINS; TEMPERATURE DEPENDENCE; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL DIODES; TUNNEL EFFECT; X RADIATION

Citation Formats

Liu, Jheng-Sin, Clavel, Michael B., Hudait, Mantu K., E-mail: mantu.hudait@vt.edu, Pandey, Rahul, Datta, Suman, Meeker, Michael, and Khodaparast, Giti A. Growth and characterization of metamorphic InAs/GaSb tunnel heterojunction on GaAs by molecular beam epitaxy. United States: N. p., 2016. Web. doi:10.1063/1.4954794.
Liu, Jheng-Sin, Clavel, Michael B., Hudait, Mantu K., E-mail: mantu.hudait@vt.edu, Pandey, Rahul, Datta, Suman, Meeker, Michael, & Khodaparast, Giti A. Growth and characterization of metamorphic InAs/GaSb tunnel heterojunction on GaAs by molecular beam epitaxy. United States. doi:10.1063/1.4954794.
Liu, Jheng-Sin, Clavel, Michael B., Hudait, Mantu K., E-mail: mantu.hudait@vt.edu, Pandey, Rahul, Datta, Suman, Meeker, Michael, and Khodaparast, Giti A. Tue . "Growth and characterization of metamorphic InAs/GaSb tunnel heterojunction on GaAs by molecular beam epitaxy". United States. doi:10.1063/1.4954794.
@article{osti_22596667,
title = {Growth and characterization of metamorphic InAs/GaSb tunnel heterojunction on GaAs by molecular beam epitaxy},
author = {Liu, Jheng-Sin and Clavel, Michael B. and Hudait, Mantu K., E-mail: mantu.hudait@vt.edu and Pandey, Rahul and Datta, Suman and Meeker, Michael and Khodaparast, Giti A.},
abstractNote = {The structural, morphological, optical, and electrical transport characteristics of a metamorphic, broken-gap InAs/GaSb p-i-n tunnel diode structure, grown by molecular beam epitaxy on GaAs, were demonstrated. Precise shutter sequences were implemented for the strain-balanced InAs/GaSb active layer growth on GaAs, as corroborated by high-resolution X-ray analysis. Cross-sectional transmission electron microscopy and detailed micrograph analysis demonstrated strain relaxation primarily via the formation of 90° Lomer misfit dislocations (MDs) exhibiting a 5.6 nm spacing and intermittent 60° MDs at the GaSb/GaAs heterointerface, which was further supported by a minimal lattice tilt of 180 arc sec observed during X-ray analysis. Selective area diffraction and Fast Fourier Transform patterns confirmed the full relaxation of the GaSb buffer layer and quasi-ideal, strain-balanced InAs/GaSb heteroepitaxy. Temperature-dependent photoluminescence measurements demonstrated the optical band gap of the GaSb layer. Strong optical signal at room temperature from this structure supports a high-quality material synthesis. Current–voltage characteristics of fabricated InAs/GaSb p-i-n tunnel diodes measured at 77 K and 290 K demonstrated two bias-dependent transport mechanisms. The Shockley–Read–Hall generation–recombination mechanism at low bias and band-to-band tunneling transport at high bias confirmed the p-i-n tunnel diode operation. This elucidated the importance of defect control in metamorphic InAs/GaSb tunnel diodes for the implementation of low-voltage and high-performance tunnel field effect transistor applications.},
doi = {10.1063/1.4954794},
journal = {Journal of Applied Physics},
number = 24,
volume = 119,
place = {United States},
year = {Tue Jun 28 00:00:00 EDT 2016},
month = {Tue Jun 28 00:00:00 EDT 2016}
}