Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP
Journal Article
·
· Journal of Applied Physics
- School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT (United Kingdom)
- Department of Electronic and Electrical Engineering, University College London, London WC1E 6BT (United Kingdom)
- CIP Technologies, Adastral Park, Martlesham Heath, Ipswich, Suffolk IP5 3RE (United Kingdom)
We demonstrate the generation of continuous wave terahertz (THz) frequency radiation from photomixers fabricated on both Fe-doped InGaAs and Fe-doped InGaAsP, grown by metal-organic chemical vapor deposition. The photomixers were excited using a pair of distributed Bragg reflector lasers with emission around 1550 nm, and THz radiation was emitted over a bandwidth of greater than 2.4 THz. Two InGaAs and four InGaAsP wafers with different Fe doping concentrations were investigated, with the InGaAs material found to outperform the InGaAsP in terms of emitted THz power. The dependencies of the emitted power on the photomixer applied bias, incident laser power, and material doping level were also studied.
- OSTI ID:
- 22594612
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 15; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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