Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors

Journal Article · Mon Sep 13 00:00:00 EDT 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1792377· OSTI ID:20632855

Otsuji, Taiichi; Hanabe, Mitsuhiro; Ogawara, Osamu ^[1]

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1. Kyushu Institute of Technology, Graduate School of Computer Science and Systems Engineering, 680-4 Kawazu, Iizuka, Fukuoka, 820-8502 (Japan)

We have observed the frequency dependence of the plasma resonant intensity in the terahertz range for a short gate-length InGaP/InGaAs/GaAs pseudomorphic high-electron-mobility transistor. The plasma resonance excitation was performed by means of interband photoexcitation using the difference-frequency component of a photomixed laser beam. Under sufficient density of two-dimensional (2D) conduction electrons (>10{sup 12} cm{sup -2}) and a moderate modulation index (the ratio of the density of photoexcited electrons to the initial density of the 2D electrons) we clearly observed the plasma-resonant peaks at 1.9 and 5.8 THz corresponding to the fundamental and third-harmonic resonance at room temperature, which is in good agreement with theory.

• OSTI ID: 20632855
• Journal Information: Applied Physics Letters, Vol. 85, Issue 11; Other Information: DOI: 10.1063/1.1792377; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRON DENSITY
ELECTRON MOBILITY
EXCITATION
FREQUENCY DEPENDENCE
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
INDIUM COMPOUNDS
LASERS
PLASMA
PLASMA WAVES
RESONANCE
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
THZ RANGE 01-100
TRANSISTORS
TWO-DIMENSIONAL CALCULATIONS