Structural and optical properties of silicon rich oxide films in graded-stoichiometric multilayers for optoelectronic devices

Journal Article · Mon Jul 18 04:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4959080· OSTI ID:22594464

Palacios-Huerta, L.; Aceves-Mijares, M. ^[1]; Cabañas-Tay, S. A.; Cardona-Castro, M. A.; Domínguez-Horna, C. ^[2]

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1. Electronics Department, INAOE, Apdo. 51, Puebla, Pue. 72000, México (Mexico)
2. Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Bellaterra 08193, Barcelona (Spain)

Silicon nanocrystals (Si-ncs) are excellent candidates for the development of optoelectronic devices. Nevertheless, different strategies are still necessary to enhance their photo and electroluminescent properties by controlling their structural and compositional properties. In this work, the effect of the stoichiometry and structure on the optical properties of silicon rich oxide (SRO) films in a multilayered (ML) structure is studied. SRO MLs with silicon excess gradually increased towards the top and bottom and towards the center of the ML produced through the variation of the stoichiometry in each SRO layer were fabricated and confirmed by X-ray photoelectron spectroscopy. Si-ncs with three main sizes were observed by a transmission electron microscope, in agreement with the stoichiometric profile of each SRO layer. The presence of the three sized Si-ncs and some oxygen related defects enhances intense violet/blue and red photoluminescence (PL) bands. The SRO MLs were super-enriched with additional excess silicon by Si{sup +} implantation, which enhanced the PL intensity. Oxygen-related defects and small Si-ncs (<2 nm) are mostly generated during ion implantation enhancing the violet/blue band to become comparable to the red band. The structural, compositional, and luminescent characteristics of the multilayers are the result of the contribution of the individual characteristics of each layer.

• OSTI ID: 22594464
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 109; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COMPARATIVE EVALUATIONS
DEFECTS
ELECTROLUMINESCENCE
FILMS
ION IMPLANTATION
LAYERS
NANOSTRUCTURES
OPTICAL PROPERTIES
OPTOELECTRONIC DEVICES
OXYGEN
PHOTOLUMINESCENCE
SILICON
SILICON IONS
STOICHIOMETRY
TRANSMISSION ELECTRON MICROSCOPY
X-RAY PHOTOELECTRON SPECTROSCOPY