Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture
- Naval Research Laboratory, Electronics Science and Technology Division, Washington, DC 20375 (United States)
A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics f{sub t}/f{sub max} of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with f{sub t}/f{sub max} of 48/60 GHz.
- OSTI ID:
- 22594315
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 109; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
ELECTRON GAS
ELECTRON MOBILITY
GALLIUM NITRIDES
HYDRIDES
INTERFACES
LAYERS
METRICS
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
SIGNALS
STRESSES
SUBSTRATES
SURFACES
TRANSISTORS
TWO-DIMENSIONAL CALCULATIONS
VAPOR PHASE EPITAXY
VAPORS