Magneto-ballistic transport in GaN nanowires
- Ecole Polytechnique Fédérale de Lausanne (EPFL), CH 1015 Lausanne (Switzerland)
The ballistic filtering property of nanoscale crosses was used to investigate the effect of perpendicular magnetic fields on the ballistic transport of electrons on wide band-gap GaN heterostructures. The straight scattering-less trajectory of electrons was modified by a perpendicular magnetic field which produced a strong non-linear behavior in the measured output voltage of the ballistic filters and allowed the observation of semi-classical and quantum effects, such as quenching of the Hall resistance and manifestation of the last plateau, in excellent agreement with the theoretical predictions. A large measured phase coherence length of 190 nm allowed the observation of universal quantum fluctuations and weak localization of electrons due to quantum interference up to ∼25 K. This work also reveals the prospect of wide band-gap GaN semiconductors as a platform for basic transport and quantum studies, whose properties allow the investigation of ballistic transport and quantum phenomena at much larger voltages and temperatures than in other semiconductors.
- OSTI ID:
- 22594298
- Journal Information:
- Applied Physics Letters, Vol. 109, Issue 10; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COHERENCE LENGTH
ELECTRIC POTENTIAL
ELECTRONS
FILTERS
FLUCTUATIONS
FORECASTING
GALLIUM NITRIDES
INTERFERENCE
MAGNETIC FIELDS
NANOWIRES
NONLINEAR PROBLEMS
QUENCHING
SCATTERING
SEMICONDUCTOR MATERIALS
TRAJECTORIES
TRANSPORT THEORY