Mid-infrared intersubband absorption from p-Ge quantum wells grown on Si substrates

Journal Article · Mon Feb 29 04:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4943145· OSTI ID:22591756

Gallacher, K.; Millar, R. W.; Ballabio, A.; Frigerio, J.; Isella, G. ^[1]; Bashir, A.; MacLaren, I. ^[2]; Ortolani, M. ^[3]

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1. L-NESS, Dipartimento di Fisica del Politecnico di Milano, Polo Territoriale di Como, Via Anzani 42, Como I-22100 (Italy)
2. School of Physics and Astronomy, University of Glasgow, Kelvin Building, University Avenue, Glasgow G12 8QQ (United Kingdom)
3. Center for Life NanoScience@Sapienza, Istituto Italiano di Tecnologia, Viale Regina Elena 291, Rome I-00161 (Italy)

Mid-infrared intersubband absorption from p-Ge quantum wells with Si{sub 0.5}Ge{sub 0.5} barriers grown on a Si substrate is demonstrated from 6 to 9 μm wavelength at room temperature and can be tuned by adjusting the quantum well thickness. Fourier transform infra-red transmission and photoluminescence measurements demonstrate clear absorption peaks corresponding to intersubband transitions among confined hole states. The work indicates an approach that will allow quantum well intersubband photodetectors to be realized on Si substrates in the important atmospheric transmission window of 8–13 μm.

• OSTI ID: 22591756
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 108; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABSORPTION
FOURIER TRANSFORMATION
PHOTODETECTORS
PHOTOLUMINESCENCE
QUANTUM WELLS
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THICKNESS
WAVELENGTHS