Lattice modification in KTiOPO{sub 4} by hydrogen and helium sequentially implantation in submicrometer depth

Journal Article · Mon May 09 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4949529· OSTI ID:22591721

Ma, Changdong ^[1]; Lu, Fei; Xu, Bo; Fan, Ranran ^[1]

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1. School of Information Science and Engineering, Shandong University, Jinan, Shandong 250100 (China)

We investigated lattice modification and its physical mechanism in H and He co-implanted, z-cut potassium titanyl phosphate (KTiOPO{sub 4}). The samples were implanted with 110 keV H and 190 keV He, both to a fluence of 4 × 10{sup 16 }cm{sup −2}, at room temperature. Rutherford backscattering/channeling, high-resolution x-ray diffraction, and transmission electron microscopy were used to examine the implantation-induced structural changes and strain. Experimental and simulated x-ray diffraction results show that the strain in the implanted KTiOPO{sub 4} crystal is caused by interstitial atoms. The strain and stress are anisotropic and depend on the crystal's orientation. Transmission electron microscopy studies indicate that ion implantation produces many dislocations in the as-implanted samples. Annealing can induce ion aggregation to form nanobubbles, but plastic deformation and ion out-diffusion prevent the KTiOPO{sub 4} surface from blistering.

• OSTI ID: 22591721
• Journal Information: Applied Physics Letters, Vol. 108, Issue 19; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANNEALING
CHANNELING
CRYSTALS
DEPTH
DISLOCATIONS
HELIUM
ION IMPLANTATION
KEV RANGE 100-1000
PHOSPHATES
PLASTICITY
POTASSIUM
RUTHERFORD BACKSCATTERING SPECTROSCOPY
STRAINS
STRESSES
SURFACES
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION