High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

Journal Article · Mon May 09 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4948692· OSTI ID:22591710

Tu, Nguyen Thanh ^[1]; Hai, Pham Nam ^[1]; Anh, Le Duc ^[1]; Tanaka, Masaaki ^[1]

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1. Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan)

We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

• OSTI ID: 22591710
• Journal Information: Applied Physics Letters, Vol. 108, Issue 19; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CURIE POINT
DOPED MATERIALS
FERROMAGNETISM
HALL EFFECT
MAGNETIC CIRCULAR DICHROISM
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
SPECTROSCOPY
TEMPERATURE RANGE 0273-0400 K
THIN FILMS