(Ga,Fe)Sb: A p-type ferromagnetic semiconductor

Journal Article · Mon Sep 29 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4896539· OSTI ID:22350802

Tu, Nguyen Thanh; Anh, Le Duc; Tanaka, Masaaki ^[1]; Hai, Pham Nam ^[1]

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1. Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan)

A p-type ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 3.9%–13.7%) has been grown by low-temperature molecular beam epitaxy (MBE) on GaAs(001) substrates. Reflection high energy electron diffraction patterns during the MBE growth and X-ray diffraction spectra indicate that (Ga,Fe)Sb layers have the zinc-blende crystal structure without any other crystallographic phase of precipitates. Magnetic circular dichroism (MCD) spectroscopy characterizations indicate that (Ga,Fe)Sb has the zinc-blende band structure with spin-splitting induced by s,p-d exchange interactions. The magnetic field dependence of the MCD intensity and anomalous Hall resistance of (Ga,Fe)Sb show clear hysteresis, demonstrating the presence of ferromagnetic order. The Curie temperature (T{sub C}) increases with increasing x and reaches 140 K at x = 13.7%. The crystal structure analyses, magneto-transport, and magneto-optical properties indicate that (Ga,Fe)Sb is an intrinsic ferromagnetic semiconductor.

• OSTI ID: 22350802
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 105; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL STRUCTURE
CURIE POINT
ELECTRON DIFFRACTION
EXCHANGE INTERACTIONS
FERROMAGNETIC MATERIALS
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
HYSTERESIS
IRON COMPOUNDS
LAYERS
MAGNETIC CIRCULAR DICHROISM
MAGNETIC FIELDS
MAGNETIC SEMICONDUCTORS
MAGNETO-OPTICAL EFFECTS
MAGNETORESISTANCE
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
REFLECTION
SPECTRA
X-RAY DIFFRACTION