p-BaSi{sub 2}/n-Si heterojunction solar cells with conversion efficiency reaching 9.0%
- Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)
- Graduate School of Engineering, Nagoya University, Nagoya 464-8603 (Japan)
p-BaSi{sub 2}/n-Si heterojunction solar cells consisting of a 20 nm thick B-doped p-BaSi{sub 2} epitaxial layer (p = 2.2 × 10{sup 18 }cm{sup −3}) on n-Si(111) (ρ = 1–4 Ω cm) were formed by molecular beam epitaxy. The separation of photogenerated minority carriers is promoted at the heterointerface in this structure. Under AM1.5 illumination, the conversion efficiency η reached 9.0%, which is the highest ever reported for solar cells with semiconducting silicides. An open-circuit voltage of 0.46 V, a short-circuit current density of 31.9 mA/cm{sup 2}, and a fill factor of 0.60 were obtained. These results demonstrate the high potential of BaSi{sub 2} for solar cell applications.
- OSTI ID:
- 22591558
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 108; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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