Application of hydrogenated amorphous silicon oxide layers to c-Si heterojunction solar cells
- Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568 (Japan)
Wide-gap hydrogenated amorphous silicon oxide (a-SiO:H), fabricated by plasma process using SiH{sub 4} and CO{sub 2} gas mixture, has been applied to crystalline silicon (c-Si) heterojunction solar cells. It has been demonstrated that incorporation of an a-SiO:H p layer, instead of a hydrogenated amorphous silicon (a-Si:H) p layer, improves the conversion efficiency slightly. Moreover, when an a-SiO:H i layer is formed on the c-Si substrate, Si epitaxial growth that occurs at an a-Si:H/c-Si heterointerface at high deposition temperatures can be prevented entirely. Accordingly, high-efficiency solar cells are fabricated more easily by applying a-SiO:H p-i layers to n-type c-Si heterojunction solar cells.
- OSTI ID:
- 21013660
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 91; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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