Graphene nanoribbons epitaxy on boron nitride

Journal Article · Mon Mar 14 04:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4943940· OSTI ID:22591447

Lu, Xiaobo; Wang, Shuopei; Wu, Shuang; Chen, Peng; Zhang, Jing; Zhao, Jing; Meng, Jianling; Xie, Guibai; Wang, Duoming; Wang, Guole; Zhang, Ting Ting; Yang, Rong; Shi, Dongxia ^[1]; Yang, Wei ^[1]; Watanabe, Kenji; Taniguchi, Takashi ^[2]; Zhang, Guangyu ^[1]

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1. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
2. National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

In this letter, we report a pilot study on epitaxy of monolayer graphene nanoribbons (GNRs) on hexagonal boron nitride (h-BN). We found that GNRs grow preferentially from the atomic steps of h-BN, forming in-plane heterostructures. GNRs with well-defined widths ranging from ∼15 nm to ∼150 nm can be obtained reliably. As-grown GNRs on h-BN have high quality with a carrier mobility of ∼20 000 cm{sup 2} V{sup −1} s{sup −1} for ∼100-nm-wide GNRs at a temperature of 1.7 K. Besides, a moiré pattern induced quasi-one-dimensional superlattice with a periodicity of ∼15 nm for GNR/h-BN was also observed, indicating zero crystallographic twisting angle between GNRs and h-BN substrate. The superlattice induced band structure modification is confirmed by our transport results. These epitaxial GNRs/h-BN with clean surfaces/interfaces and tailored widths provide an ideal platform for high-performance GNR devices.

• OSTI ID: 22591447
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 108; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BORON NITRIDES
CARRIER MOBILITY
CRYSTALLOGRAPHY
EPITAXY
EQUIPMENT
GRAPHENE
INTERFACES
NANOSTRUCTURES
PERIODICITY
SUPERLATTICES
WIDTH