Manipulation of the presence of helical surface states of topological insulators using Sb{sub 2}Te{sub 3}-GeTe superlattices
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba 305-8562 (Japan)
Ab initio calculations have predicted a transition between topological insulators and band insulators in superlattices consisting of Sb{sub 2}Te{sub 3} and GeTe, when the periodicity is varied. We examine the amplitude of the weak antilocalization effect to confirm the transition. In agreement with the predictions, robust surface states are present for (Sb{sub 2}Te{sub 3}){sub 1}(GeTe){sub 2} but absent when the content of the well-known topological insulator Sb{sub 2}Te{sub 3} is increased as (Sb{sub 2}Te{sub 3}){sub 4}(GeTe){sub 2}, manifesting that the electronic coupling in the superlattices affects the emergence of the helical surface states nontrivially.
- OSTI ID:
- 22591440
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 108; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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