Manipulation of the presence of helical surface states of topological insulators using Sb{sub 2}Te{sub 3}-GeTe superlattices
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba 305-8562 (Japan)
Ab initio calculations have predicted a transition between topological insulators and band insulators in superlattices consisting of Sb{sub 2}Te{sub 3} and GeTe, when the periodicity is varied. We examine the amplitude of the weak antilocalization effect to confirm the transition. In agreement with the predictions, robust surface states are present for (Sb{sub 2}Te{sub 3}){sub 1}(GeTe){sub 2} but absent when the content of the well-known topological insulator Sb{sub 2}Te{sub 3} is increased as (Sb{sub 2}Te{sub 3}){sub 4}(GeTe){sub 2}, manifesting that the electronic coupling in the superlattices affects the emergence of the helical surface states nontrivially.
- OSTI ID:
- 22591440
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 11; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Anomalous helicity-dependent photocurrent in the topological insulator () on a GaAs substrate [Spin manipulation at the interface of a topological insulator and a non-magnetic semiconductor]
Disorder-induced anomalously signed Hall effect in crystalline GeTe/Sb{sub 2}Te{sub 3} superlattice-like materials
Emergent and Tunable Topological Surface States in Complementary Sb/Bi 2 Te 3 and Bi 2 Te 3 /Sb Thin-Film Heterostructures
Journal Article
·
Wed Jan 24 00:00:00 EST 2018
· Physical Review B
·
OSTI ID:22591440
+6 more
Disorder-induced anomalously signed Hall effect in crystalline GeTe/Sb{sub 2}Te{sub 3} superlattice-like materials
Journal Article
·
Fri Aug 21 00:00:00 EDT 2015
· Journal of Applied Physics
·
OSTI ID:22591440
+1 more
Emergent and Tunable Topological Surface States in Complementary Sb/Bi 2 Te 3 and Bi 2 Te 3 /Sb Thin-Film Heterostructures
Journal Article
·
Tue Jun 14 00:00:00 EDT 2022
· ACS Nano
·
OSTI ID:22591440
+2 more