Effect of sputtering power on the growth of Ru films deposited by magnetron sputtering
- CSIR-Central Electronics Engineering Research Institute, Pilani-333031, Rajasthan (India)
- Department of Electronics, Banasthali University-304022, Rajasthan (India)
Ruthenium is deposited by DC magnetron sputtering at different powers and is characterized. The effect of sputtering power on the electrical and structural properties of the film is investigated experimentally. High resolution X-ray diffraction is used to characterize the microstructure of Ru films deposited on SiO{sub 2} surface. The peak (002) is more sharp and intense with full width at half maximum (FWHM) of 0.37° at 250W. The grain size increases with increase in sputtering power improving the crystallinity of the film. The film deposited at high sputtering power also showed lower resistivity (12.40 µΩ-cm) and higher mobility (4.82 cm{sup 2}/V.s) as compared to the film deposited at low power. The surface morphology of the film is studied by atomic force microscopy (AFM).
- OSTI ID:
- 22591087
- Journal Information:
- AIP Conference Proceedings, Vol. 1724, Issue 1; Conference: ETMN-2015: 2. international conference on emerging technologies: Micro to nano 2015, Rajasthan (India), 24-25 Oct 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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