Temperature independent infrared responsivity of a quantum dot quantum cascade photodetector

Journal Article · Mon Jun 20 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4954392· OSTI ID:22590812

Wang, Feng-Jiao; Zhuo, Ning; Liu, Shu-Man; Ren, Fei; Ning, Zhen-Dong; Ye, Xiao-Ling; Liu, Jun-Qi; Zhai, Shen-Qiang; Liu, Feng-Qi; Wang, Zhan-Guo ^[1]

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1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing 100083 (China)

We demonstrate a quantum dot quantum cascade photodetector with a hybrid active region of InAs quantum dots and an InGaAs quantum well, which exhibited a temperature independent response at 4.5 μm. The normal incident responsivity reached 10.3 mA/W at 120 K and maintained a value of 9 mA/W up to 260 K. It exhibited a specific detectivity above 10{sup 11} cm Hz{sup 1/2} W{sup −1} at 77 K, which remained at 10{sup 8} cm Hz{sup 1/2} W{sup −1} at 260 K. We ascribe the device's good thermal stability of infrared response to the three-dimensional quantum confinement of the InAs quantum dots incorporated in the active region.

• OSTI ID: 22590812
• Journal Information: Applied Physics Letters, Vol. 108, Issue 25; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
EQUIPMENT
GALLIUM ARSENIDES
HYBRIDIZATION
INDIUM ARSENIDES
PHOTODETECTORS
QUANTUM DOTS
QUANTUM WELLS
STABILITY