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Title: Nonthermal combined ultraviolet and vacuum-ultraviolet curing process for organosilicate dielectrics

Abstract

Porous SiCOH films are of great interest in semiconductor fabrication due to their low-dielectric constant properties. Post-deposition treatments using ultraviolet (UV) light on organosilicate thin films are required to decompose labile pore generators (porogens) and to ensure optimum network formation to improve the electrical and mechanical properties of low-k dielectrics. The goal of this work is to choose the best vacuum-ultraviolet photon energy in conjunction with vacuum ultraviolet (VUV) photons without the need for heating the dielectric to identify those wavelengths that will have the most beneficial effect on improving the dielectric properties and minimizing damage. VUV irradiation between 8.3 and 8.9 eV was found to increase the hardness and elastic modulus of low-k dielectrics at room temperature. Combined with UV exposures of 6.2 eV, it was found that this “UV/VUV curing” process is improved compared with current UV curing. We show that UV/VUV curing can overcome drawbacks of UV curing and improve the properties of dielectrics more efficiently without the need for high-temperature heating of the dielectric.

Authors:
; ; ; ; ; ; ;  [1]; ; ;  [2];  [3]
  1. Plasma Processing and Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
  2. National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)
  3. Stanford University, Stanford, California 94305 (United States)
Publication Date:
OSTI Identifier:
22590800
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 24; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CURING; DAMAGE; DEPOSITION; DIELECTRIC MATERIALS; FABRICATION; FAR ULTRAVIOLET RADIATION; HARDNESS; HEATING; IRRADIATION; PERMITTIVITY; POROUS MATERIALS; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; WAVELENGTHS

Citation Formats

Zheng, H., Guo, X., Pei, D., Li, W., Blatz, J., Hsu, K., Benjamin, D., Shohet, J. L., E-mail: shohet@engr.wisc.edu, Lin, Y.-H., Fung, H.-S., Chen, C.-C., and Nishi, Y.. Nonthermal combined ultraviolet and vacuum-ultraviolet curing process for organosilicate dielectrics. United States: N. p., 2016. Web. doi:10.1063/1.4954176.
Zheng, H., Guo, X., Pei, D., Li, W., Blatz, J., Hsu, K., Benjamin, D., Shohet, J. L., E-mail: shohet@engr.wisc.edu, Lin, Y.-H., Fung, H.-S., Chen, C.-C., & Nishi, Y.. Nonthermal combined ultraviolet and vacuum-ultraviolet curing process for organosilicate dielectrics. United States. doi:10.1063/1.4954176.
Zheng, H., Guo, X., Pei, D., Li, W., Blatz, J., Hsu, K., Benjamin, D., Shohet, J. L., E-mail: shohet@engr.wisc.edu, Lin, Y.-H., Fung, H.-S., Chen, C.-C., and Nishi, Y.. Mon . "Nonthermal combined ultraviolet and vacuum-ultraviolet curing process for organosilicate dielectrics". United States. doi:10.1063/1.4954176.
@article{osti_22590800,
title = {Nonthermal combined ultraviolet and vacuum-ultraviolet curing process for organosilicate dielectrics},
author = {Zheng, H. and Guo, X. and Pei, D. and Li, W. and Blatz, J. and Hsu, K. and Benjamin, D. and Shohet, J. L., E-mail: shohet@engr.wisc.edu and Lin, Y.-H. and Fung, H.-S. and Chen, C.-C. and Nishi, Y.},
abstractNote = {Porous SiCOH films are of great interest in semiconductor fabrication due to their low-dielectric constant properties. Post-deposition treatments using ultraviolet (UV) light on organosilicate thin films are required to decompose labile pore generators (porogens) and to ensure optimum network formation to improve the electrical and mechanical properties of low-k dielectrics. The goal of this work is to choose the best vacuum-ultraviolet photon energy in conjunction with vacuum ultraviolet (VUV) photons without the need for heating the dielectric to identify those wavelengths that will have the most beneficial effect on improving the dielectric properties and minimizing damage. VUV irradiation between 8.3 and 8.9 eV was found to increase the hardness and elastic modulus of low-k dielectrics at room temperature. Combined with UV exposures of 6.2 eV, it was found that this “UV/VUV curing” process is improved compared with current UV curing. We show that UV/VUV curing can overcome drawbacks of UV curing and improve the properties of dielectrics more efficiently without the need for high-temperature heating of the dielectric.},
doi = {10.1063/1.4954176},
journal = {Applied Physics Letters},
number = 24,
volume = 108,
place = {United States},
year = {Mon Jun 13 00:00:00 EDT 2016},
month = {Mon Jun 13 00:00:00 EDT 2016}
}